The TOSHIBA TLP250 consists of an infrared emitting diode and a integrated
This unit is 8-lead DIP package.
TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.
• Input threshold current: 5mA(max)
• Supply current : 11mA(max)
• Supply voltage : 10-35V
• Output current : ±1.5A (max)
• Switching time tpLH/tpHL): 0.5μs(max)
• Isolation voltage: 2500Vrms(min)
• UL-recognized: UL 1577, File No.E67349
• cUL-recognized: CSA Component Acceptance Service No.5A
• VDE-Approved: EN 60747-5- 5 (Note 1)