Description
MJE15032 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.
Features:-
• High DC current gain
• TO−220 compact package
• Epoxy meets UL 94 V−0 @ 0.125 in
• Simple drive requirements
• Easy to carry and handle
Detailed Specifications:-
| Transistor Polarity | NPN |
| Collector−Emitter Voltage (VCEO) | 250VDC |
| Collector−Base Voltage (VCBO) | 250VDC |
| Emitter−Base Voltage (VEBO) | 5VDC |
| Continuous Collector Current (Ic) | 8ADC |
| Continuous Base Current (Ib) | 2ADC |
| Power Dissipation (Pd) | 50W |
| Operating Temperature Range | -65 – 150°C |
| DC Current Gain (hFE) | 70 |
